Beyond – CMOS State Of The Art And Trends – Alessandro Cresti

The first spintronics- oriented result was obtained for Al/STO (Vaz et al. 2019). Here, instead of relying on charge transfer from the epitaxially grown LAO layer, the sputtered Al chemically reacts with STO by pulling oxygen and becoming oxidized. As mentioned above, oxygen vacancies created in STO release electrons in the lattice. Since the Al layer is ultra-thin (~0.3 nm), oxygen removal only occurs at the top layers of STO, thus leading to the formation of a 2DEG.

A transmission electron microscopy image of this system is shown in Figure 5.2(c). Spin–charge conversion experiments revealed a maximum λIEE of about 30 nm, almost five times larger than in LAO/STO, with several sign changes over a gate voltage range. This peculiar behavior was mapped to the band structure of the 2DEG, using a combination of transport, angle-resolved photoemission spectroscopy (ARPES) and semiclassical Boltzmann calculations, with the latter showing remarkable similarity with the experimental data (see Figure 5.2(d)).

Given the larger carrier density seen in Al/STO when compared to that in LAO/STO, additional features at higher energies were reachable. By carefully analyzing the spin structure in this region, it was found that some λIEE maxima were attributed not to regions of enhanced Rashba splitting, but to non-trivial spin textures rising from spin-polarized topological edge states, pointing towards unexplored topological features in oxide-based 2DEGs. The last ingredient that explained the large λIEE was the Al itself. Since the Al layer is oxidative when deposited on STO, the barrier between the NiFe and the 2DEG was mostly composed of Al oxide.

Upon spin injection, the spins can either relax in the 2DEG, contributing to the spin–charge conversion effects, or scatter back to the ferromagnet. In all-metal systems, since the whole structure is conductive, the second effect largely reduces the experimental λIEE values. By estimating the resistance across the barrier for LAO/STO and Al/STO, a difference of about five orders of magnitude is found, making the 2DEG in the latter much more encapsulated, which prevents undesired scattering back to the NiFe.

1.3. Simulation of III–V-based TFETs 1.4. SS degradation mechanisms 1.5. Strategies to improve the on-state current 1.6. Conclusion 1.7. References Chapter 2. Field-Effect Transistors Based on 2D Materials: A Modeling Perspective 2.1. Introduction 2.2. Modeling approach 2.3. 2D device performance analysis 2.4. Challenges and opportunities 2.5. Conclusion and outlook 2.6. Acknowledgments 2.7. References Chapter 3. Negative Capacitance Field-Effect Transistors 3.1. Introduction 3.2. The rise of NC-FETs 3.3. Understanding NC-FETs from scratch 3.4.

Fundamental challenges of NC-FET 3.5. Design and optimization of NC-FET 3.6. Appendix: A rule for polarization dynamics-based interpretation of the subthermionic SS 3.7. References Chapter 4. Z2 Field-Effect Transistors 4.1. Introduction 4.2. Z2FET steady-state operation 4.3. Z2FET steady-state analytical and compact model 4.6. Z2FET structure optimization 4.7. Z2FET advanced applications 4.8. Conclusion 4.9. References Chapter 5. Two-Dimensional Spintronics 5.1. Introduction 5.2. Spintronics in 2D Rashba gases at oxide surfaces–interfaces 5.3. Spintronics in lateral spin devices in 2D materials 5.4. 2D materials in magnetic tunnel junctions 5.5.

Topological insulators in spintronics 5.6. References Chapter 6. Valleytronics in 2D Materials 6.1. Introduction 6.2. Exciton and valley physics 6.3. Valley lifetime, transport and operations 6.4. Valleytronic devices and materials 6.5. Valleytronic computing 6.6. References Chapter 7. Molecular Electronics: Electron, Spin and Thermal Transport through Molecules 7.1. Introduction 7.2. How to make a molecular junction 7.3. Electron transport in molecular devices: back to basics 7.4. Electron transport: DC and low frequency 7.5.

Electron transport at high frequencies 7.6. Spin-dependent electron transport in molecular junctions 7.7. Molecular electronic plasmonics 7.8. Quantum interference and thermal transport 7.9. Noise in molecular junctions 7.10. Conclusion and further reading 7.11. References Chapter 8. Superconducting Quantum Electronics 8.1. Introduction 8.2. Passive superconducting electronics 8.3. Superconducting detectors 8.4.

Superconducting digital electronics 8.5. Superconducting quantum computing 8.6. Cryogenic cooling 8.7. References Chapter 9. All-Optical Chips 9.1. Introduction 9.2. Nanophotonic circuits 9.3. Phase change photonics 9.4. Photonic tensor core 9.5. Optical artificial neural network 9.6. Challenges and outlook 9.7. References List of Authors Index List of Figures Chapter 1 Figure 1.1 Sketch of the TFET working principle.

In the off state (VG = 0 V), the BTBT is suppressed by imposing the CB in the channel region above the VB in the source region.

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